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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -140 -8 -15 -12 UNIT V V V A A Open collector TC=25ae PC Collector power dissipation 100 W 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA ; IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=0.5A ; VCE=-10V;f=1MHz 2000 5000 30000 MIN -140 -2.5 -3.0 -100 -100 -100 |I |I |I TYP. MAX UNIT V V V A A A SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT Switching times ton tstg tf Transition frequency HAN INC Storage time Fall time Turn-on time SEM GE OND IC TOR UC 20 1.0 1.5 1.2 MHz |I |I |I s s s IC=-7A; VCC=-50V IB1=-IB2=-7mA hFE-2 classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1255 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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